Specification
Key Features | ||
Capacity | 1TB | |
Form Factor | M.2 (2280) | |
Flash Type | Samsung V-NAND TLC | |
Interface | PCIe 4.0 x4 NVMe 2.0 | |
Sequential R/W | Sequential Read Speed: Up to 7,250 MB/s Sequential Write Speed: Up to 6,300 MB/s |
|
MTBF | 1.5 Million Hours Reliability (MTBF) | |
Others | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) Auto Garbage Collection Algorithm |
|
Physical Specification | ||
Dimension | 80.15 x 22.15 x 2.38mm | |
Weight | Max 9.0g Weight | |
Temperature | ||
Operating Temperature | 0 – 70 ℃ | |
Shock resistance | 1,500 G & 0.5 ms (Half sine) | |
Warranty | ||
Manufacturing Warranty | 3 years |
Description
Samsung 990 EVO PLUS 1TB PCIe Gen 4.0 M.2 NVMe SSD
The Samsung 990 EVO PLUS 1TB PCIe Gen 4.0 M.2 NVMe SSD features Samsung’s superior V-NAND TLC technology and an in-house controller. This Samsung SSD has remarkable performance, with sequential read speeds of up to 7250 MB/s and sequential write speeds of up to 6300 MB/s. Its M.2 (2280) form format provides compatibility with a wide selection of contemporary motherboards, laptops, and workstations, making it an excellent solution for anyone looking to expand their storage. With a PCIe Gen 4.0 x4 NVMe 2.0 interface, the Samsung 990 EVO PLUS Gen4 SSD maximizes bandwidth and efficiency, delivering substantially faster data transfer rates than previous-generation SSDs. The Samsung 990 EVO PLUS 1TB PCIe Gen 4 SSD uses Host Memory Buffer (HMB) technology instead of a dedicated DRAM cache, which improves speed while consuming less power. The Samsung 990 EVO PLUS SSD includes critical functions like TRIM, S.M.A.R.T monitoring, and an automated garbage removal mechanism, which ensure long-term efficiency and dependability. This Samsung SSD supports AES 256-bit encryption (Class 0), TCG Opal, and IEEE1667, ensuring strong data protection. The device works at a voltage of 3.3V ± 5%, ensuring consistent power usage. The Samsung 990 EVO PLUS 1TB PCIe Gen 4.0 M.2 NVMe SSD is developed for durability, with a mean time between failures (MTBF) of 1.5 million hours and the ability to withstand rigorous workloads. It functions at temperatures ranging from 0 to 70°C and can resist shocks of up to 1,500 G with a 0.5 ms half-sine wave response.